NDLI: High transparent and conductive ZnO thin films doped with Ti

Content Provider	IEEE Xplore Digital Library
Author	Yang-Ming Lu Chen-Min Chang Shu-I Tsai
Copyright Year	2002
Description	Author affiliation: Dept. of Electron. Eng., Kun Shan Univ. of Technol., Tainan, Taiwan (Yang-Ming Lu; Chen-Min Chang; Shu-I Tsai)
Abstract	Highly conductive and transparent impurities-doped zinc oxide thin films have recently gained much attention because they are composed of inexpensive, abundant materials. The Ti doping ZnO thin films were deposited by simultaneously magnetron co-sputtering from both Zn and Ti targets in a mixture of oxygen and argon gases onto heated Corning 7059 glass substrates. By adjusting the Ar/O/sub 2/ ratio and other process parameters including RF power, and substrate temperature, the electrical property of ZnO thin films changes from an isolation to a good conduction. The results show that deposition rate is an approximately linear function of DC power of Ti target except at 300 watts. At 300 watts, the growth rate decreases may due to strong interference between zinc and titanium sputtered atomic fluxes. The proud (002) diffraction peak is found in the XRD(X-ray diffraction) patterns of the deposited ZnO films which demonstrates a strong preferred orientation existing in the films. The incorporation of titanium atoms into zinc oxide films is not effective until the Ti target power increased to a value of 250watts. The atomic percents of titanium in the films are measured to be 1.33% and 2.51% corresponding to 250watts. and 300watts of applied Ti target power respectively. The XRD patterns shown only a single ZnO phase existing and shifted to lower 2 theta values imply Ti atoms incorporated into the ZnO lattice and occupy the zinc atoms lattice sites. Because the oxidation number of Ti ion is higher than zinc ion, the resistivity is expected lowered due to extra carriers beside the native oxygen vacancies. The reistivity of undoped ZnO films is extremely high and decrease to a value of 3.78 /spl times/ 10/sup -2/ ohm-cm when 2.51% atomic percent of Ti is incorporated. All of the zinc oxide films show good transmittance in the range of 4000-7000 angstrom. The average transmittance is 70-80% in this study. The optical energy gap increases with increasing the doping amount of Ti in the films. The maximum value of optical energy gap gained in this study is 3.18 eV when the doping amount of Ti is 1.33 atomic %.
Sponsorship	Nat. Sci. Council Ministr. Educ
Starting Page	178
Ending Page	181
File Size	203867
Page Count	4
File Format	PDF
ISBN	078037682X
DOI	10.1109/EMAP.2002.1188834
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-12-04
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide Conductive films Atomic measurements Optical films Doping Titanium Atomic layer deposition Atom optics Sputtering Argon
Content Type	Text
Resource Type	Article

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