NDLI: Etching resistivity of AlN ceramics surface

Content Provider	IEEE Xplore Digital Library
Author	Yasumoto, T. Asai, H. Monma, J. Iwase, N.
Copyright Year	1995
Description	Author affiliation: Mater. & Devices Dev. Center, Toshiba Corp., Yokohama, Japan (Yasumoto, T.)
Abstract	The etching resistivity of aluminum nitride (AlN) surface was investigated on properties of pull-out for AlN ceramics grain and uneven dissolution in chemical agents. Maximum step irregularity (MSI) of AIN with Y/sub 2/O/sub 3/ finally reaches to 7/spl times/10/sup -7/m at 10 k s at 50/spl deg/C in the aqueous solution of 2.5 mol KCN. This value is below the grain size of AlN, 4/spl times/10/sup -6/m. AlN grains did not begin to pullout, when the MSI value was below the AlN grain size. MSI of AlN with CaO reached to 2/spl times/10/sup -2/m at 3 ks in the same solution. This value is equal to the limit value of 2/spl times/10/sup -4/m. No pit was observed on the surface of AIN with Y/sub 2/O/sub 3/ until 10 ks from SEM result. However, many pits were observed at the grain boundary even at 30 s on the surface of AlN with CaO. The etching resistivity for AlN with Y/sub 2/O/sub 3/ is about 300 times as long as that with CaO. The surface of AlN ceramics with Y/sub 2/O/sub 3/ was confirmed to be stable against the KCN aqueous solution. The surface of AlN with CaO received a great deal of damage in etching solution. The AlN with Y/sub 2/O/sub 3/ is suitable choice for a MCM substrate with wet etching process.
Starting Page	244
Ending Page	247
File Size	794570
Page Count	4
File Format	PDF
ISBN	0780336224
DOI	10.1109/IEMT.1995.541036
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-12-04
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Conductivity Ceramics Surface morphology Substrates Grain size Grain boundaries Metallization Additives Rough surfaces
Content Type	Text
Resource Type	Article

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