NDLI: Study of low-frequency excess noise in RTA annealed n-type gallium nitride

Content Provider	IEEE Xplore Digital Library
Author	Zhu, C.F. Fong, W.K. Leung, B.H. Cheng, C.C. Surya, C.
Copyright Year	2000
Description	Author affiliation: Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., China (Zhu, C.F.)
Abstract	Low-frequency noise is investigated in n-type GaN film grown by rf-plasma assisted molecular beam epitaxy. The temperature dependence of the voltage noise power spectra, S/sub v/(f), was examined from 400 K to 80 K in the frequency range between 30 Hz and 100 kHz, which can be modeled as the superposition of 1/f (flicker) noise and G-R noise. At f>500 Hz the noise is dominated by G-R noise with activation energies of 360 meV and 65 meV from the conduct band. The results clearly demonstrate the trap origin for both the 1/f noise and G-R noise. At the low-frequency range the fluctuation was dominated by 1/f noise. To determine the origin of the noise we considered both the bulk mobility fluctuation and the trap fluctuation models. Our experimental results showed that rapid thermal annealing (RTA) at 800/spl deg/C resulted in over one order of magnitude decrease in the Hooge parameter. Annealing at temperatures in excess of 1000/spl deg/C resulted in significant increase in the noise. Photoluminescence and X-ray diffraction measurements also showed that the crystallinity of the films improved with RTA at 800/spl deg/C with an accompanying reduction in deep levels. Annealing at 900/spl deg/C and 1000/spl deg/C resulted in an increase in the FWHM of the X-ray diffraction indicative of thermal decomposition of the materials. The results are in excellent agreement with the trend of Hooge parameters as a function of annealing temperature, strongly indicating trap origin of the observed 1/f noise.
Starting Page	24
Ending Page	29
File Size	348953
Page Count	6
File Format	PDF
ISBN	0780363043
DOI	10.1109/HKEDM.2000.904208
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-24
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-frequency noise 1f noise Fluctuations Rapid thermal annealing X-ray diffraction Gallium nitride Molecular beam epitaxial growth Temperature dependence Voltage Frequency
Content Type	Text
Resource Type	Article

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