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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Uchida, M. Horikawa, N. Tanaka, K. Takahashi, K. Kiyosawa, T. Hayashi, M. Niwayama, M. Kusumoto, O. Adachi, K. Kudou, C. Kitabatake, M. |
| Copyright Year | 2011 |
| Description | Author affiliation: Advanced Devices Development Center, Panasonic Corporation, 3-1-1, Yagumo-naka-machi, Moriguchi, Osaka 570-8501, Japan (Uchida, M.; Horikawa, N.; Tanaka, K.; Takahashi, K.; Kiyosawa, T.; Hayashi, M.; Niwayama, M.; Kusumoto, O.; Adachi, K.; Kudou, C.; Kitabatake, M.) |
| Abstract | A novel SiC power MOSFET with an integrated unipolar internal inverse diode has been developed for the first time. Our novel SiC MOSFET has two specific features. One is that the growth of the SiC crystal defects caused by the continuous bipolar forward current of the internal diode with pn junction is completely eliminated because the unipolar diode current passes through the MOS channel region. The other is that the very small-size power modules and/or power systems are successfully designed because the external inverse diode chips paired with the transistor chips are not necessary. |
| File Size | 250489 |
| File Format | |
| ISBN | 9781457705069 |
| ISSN | 2156017X |
| e-ISBN | 9781457705052 |
| e-ISBN | 9781457705045 |
| DOI | 10.1109/IEDM.2011.6131620 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon carbide Schottky diodes MOSFET circuits FETs Logic gates Threshold voltage Temperature dependence |
| Content Type | Text |
| Resource Type | Article |
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