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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kosman, S.L. Stevens, E.G. Cassidy, J.C. Chang, W.C. Roselle, P. Miller, W.A. Mehra, M. Burkey, B.C. Lee, T.H. Hawkins, G.A. Khosla, R.P. |
| Copyright Year | 1990 |
| Description | Author affiliation: Eastman Kodak Co., Rochester, NY, USA (Kosman, S.L.; Stevens, E.G.; Cassidy, J.C.; Chang, W.C.; Roselle, P.; Miller, W.A.; Mehra, M.; Burkey, B.C.; Lee, T.H.; Hawkins, G.A.; Khosla, R.P.) |
| Abstract | A large-area, 1.3 million pixel, full-frame CCD (charge coupled device) image sensor has been developed that incorporates both a lateral-overflow drain (LOD) for antiblooming control and a transparent indium-tin oxide (ITO) gate electrode for increased photosensitivity. The LOD offers high responsivity, extremely linear photoresponse, and ultrahigh optical overload protection. The replacement of one polysilicon phase with ITO increases the quantum efficiency at 400 nm to 15.8% from the 1.5% for the standard double polysilicon gate electrode process. The LOD design allows for antiblooming suppression in excess of 43000 times the saturation signal while maintaining better than 1% nonlinearity.< |
| Starting Page | 287 |
| Ending Page | 290 |
| File Size | 368692 |
| Page Count | 4 |
| File Format | |
| ISSN | 01631918 |
| DOI | 10.1109/IEDM.1990.237173 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1990-12-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Charge-coupled image sensors Indium tin oxide Electrodes Pixel Charge coupled devices Image sensors Ultraviolet sources Optical saturation Optical sensors Protection |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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