NDLI: Heteroepitaxial PbTe-Si and (Pb, Sn)Se-Si structures for monolithic 3-5 µm and 8-12 µm infrared sensor arrays

Content Provider	IEEE Xplore Digital Library
Author	Zogg, H. Norton, P.
Copyright Year	1985
Description	Author affiliation: Swiss Federal Institute of Technology, Zürich, Switzerland (Zogg, H.)
Abstract	Epitaxial layers of narrow gap PbTe and (Pb,Sn) Se have been grown on Si substrates, and used for the first time to fabricate intrinsic photovoltaic IR-sensors on Si for the 3-5µm and 8-12µm range. The narrow gap semiconductors were grown on the BaF2side of a graded (Ca,Ba)F2buffer film which served to overcome the large lattice mismatch (up to 19%) to the Si. The backside illuminated IR-devices revealed resistance area products at 87K of up to $4Ωcm^{2}for$ PbTe (cut -off wavelength 5.8µm), and up to $0.5Ωcm^{2}for$ (Pb,Sn) Se with 9.7 µm cut-off. These values come close to or exceed the photon noise limit (for 295K background radiation, 180° FOV, 50% quantum efficiency). The results open up the possibility to construct large monolithic IR-FPA's (focal plane arrays) with IR-sensors in the narrow gap semiconductor and signal processing in the Si.
Starting Page	121
Ending Page	124
File Size	310682
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1985.190908
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-12-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensor arrays Infrared sensors Epitaxial layers Substrates Photovoltaic systems Solar power generation Semiconductor films Lattices Background noise Semiconductor device noise
Content Type	Text
Resource Type	Article

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