NDLI: High capacitance ultra-thin Ta2O5dielectric film applied to a high-speed bipolar memory cell

Content Provider	IEEE Xplore Digital Library
Author	Nishioka, Y. Homma, N. Shinriki, H. Mukai, K. Yamaguchi, K. Uchida, A. Higeta, K. Ogiue, K.
Copyright Year	1985
Description	Author affiliation: Hitachi Ltd., Kokubunji, Tokyo, Japan (Nishioka, Y.)
Abstract	A new capacitor technology, with extremely thin Ta2O5film deposition and weakspot oxidation, is developed to realize high capacitance and high reliability. The Ta2O5film was reactively sputtered and followed by the weakspot oxidation. The oxidation improves the breakdown voltage by selectively oxidizing Si surface at weakspots where Ta2O5is locally thin. Consequently it reduces the defect density of the Ta2O5capacitor with least reduction of capacitance. This technology is based on a newly discovered fact that Ta2O5film below 200 Å remains in amorphous state with high dielectric breakdown strength even after heat treatments up to 1000 °C. Application of the Ta2O5capacitor to a switched-load resistor memory makes it possible to reduce the memory cell area to one third that of a conventional one. The memory provides high speed operation, and has sufficient soft error immunity.
Starting Page	42
Ending Page	45
File Size	300364
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1985.190886
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-12-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitance Capacitors Heat treatment Dielectric breakdown Oxidation Temperature Large scale integration Fabrication Amorphous materials Dielectric thin films
Content Type	Text
Resource Type	Article

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