NDLI: Effects of avalanche injection currents on the endurance of Si MOS devices

Content Provider	IEEE Xplore Digital Library
Author	Sah, C. Sun, J.Y.-C. Tzou, J.J.-T.
Copyright Year	1982
Description	Author affiliation: University of Illinois, Urbana, Illinois (Sah, C.)
Abstract	A new bulk donor defect in the silicon surface space charge layer is identified as a major limitation on the endurance of avalanche injection type nonvolatile MOS memory transistors. This donor is generated during heavy avalanche injection of holes and electrons and it reduces the silicon surface electric field and the injection current or efficiency at constant injection voltages. Generation-annealing kinetics data and process dependences are summarized which suggest that the donor is an oxygen complex which can be annealed by hydrogen bonding and activated when the hot avalanche holes and electrons break the oxygen-hydrogen bond. The oxygen donor model is consistent with our current knowledge of bulk oxygen properties in silicon such as solubility, diffusivity, outdiffusion and surface denudation. A design example is presented to give the threshold voltage endurance as a function of the number of write/erase cycles. Process variables to reduce the donor density and to increase the endurance are delineated.
Starting Page	753
Ending Page	756
File Size	381624
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1982.190404
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1982-12-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOS devices Silicon Charge carrier processes Bonding Space charge Nonvolatile memory MOSFETs Voltage Kinetic theory Annealing
Content Type	Text
Resource Type	Article

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