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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Takusagawa, M. Nishi, H. Osaka, S. Morimoto, M. Imai, H. Takanashi, H. Misugi, T. |
| Copyright Year | 1975 |
| Description | Author affiliation: Fujitsu Laboratories Ltd., Kawasaki, Japan (Takusagawa, M.) |
| Abstract | A new type of internally striped planar (ISP) DH lasers is developed with using a new Sulfur selective diffusion technique. The increase of the threshold ratio with the narrowing of the stripe width is more gentle for stripe width range near 10 µm in the laser than in both Zn-diffused planar and proton-bombardment stripe-geometry lasers. Single transverse mode operation with nearly constant width is confirmed up to 100 °C and up to three times of a threshold. Room-temperature CW lasers stably operate over more than 3000 hours. Any deterioration of laser characteristics caused by S atom and its diffusion process is not observed. Sulfur selective diffusion is one of most promising technique for long life lasers and other devices. |
| Starting Page | 490 |
| Ending Page | 493 |
| File Size | 371683 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/IEDM.1975.188930 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1975-12-01 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | DH-HEMTs Laser modes Fiber lasers Gallium arsenide Optical device fabrication Atomic beams Atom lasers Zinc Threshold current Laboratories |
| Content Type | Text |
| Resource Type | Article |
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