NDLI: Limitations on injection efficiency in power devices

Content Provider	IEEE Xplore Digital Library
Author	Adler, M.S. Beatty, B.A. Krishna, S. Temple, V.A.K. Torreno, M.L.
Copyright Year	1975
Description	Author affiliation: General Electric Co., Schenectady, New York (Adler, M.S.)
Abstract	In this paper the mechanisms of bandgap narrowing, Shockly-Read-Hall (SRH) recombination, Auger recombination, and carrier-carrier and carrier-lattice scattering are included in an exact one-dimensional model of a bipolar transistor. The transistor is used as a vehicle for studying the relative importance of each of these phenomena in determining emitter efficiency in devices with emitter junction depths of 1µm to 8µm. It is shown that band gap narrowing is the dominant influence for devices with shallow emitters of 2µm or less and that SRH recombination dominates for emitter depths greater than 4µm. Calculations are also presented showing the effects of the emitter surface concentration and high level injection on the current gain for devices with emitter junction depths of 1 µm to 8µm. It is shown that there is an optimum surface concentration $of5\times10^\{19\}cm^{-3}for$ the 1µm emitter depth but no optimum under $10^{21}cm^{-3}for$ devices with emitter depths greater than 4µm.
Starting Page	175
Ending Page	179
File Size	403306
Page Count	5
File Format	PDF
DOI	10.1109/IEDM.1975.188853
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1975-12-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap Bipolar transistors Equations Scattering Vehicles Rectifiers Thyristors Charge carrier lifetime Context modeling Power transistors
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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