NDLI: An improved 1/f noise model of an MOS transistor

Content Provider	IEEE Xplore Digital Library
Author	Backensto, W.V. Viswanathan, C.R.
Copyright Year	1975
Description	Author affiliation: Hughes Aircraft Company, Culver City, California (Backensto, W.V.)
Abstract	An improved 1/f noise model of an MOS transistor is developed which verifies previously observed dependencies on geometry and the density of surface states (NSS) but predicts an explicit bias dependence in addition to the dependence brought out by the change of NSSwith bias. The model is an extension of the tunneling mechanism proposed by McWhorter in which carriers in the channel tunnel into and out of traps distributed in the oxide. The essential difference between this work and previous work is in the assumed transformation between the fluctuation in the number of trapped carriers and the resulting fluctuation in the drain current. The improved noise model results in the experimentally verified prediction that noise gradually decreases as the drain bias increases until saturation is reached. In addition, the improved noise model predicts a definite gate bias dependence of 1/f noise, increasing as the gate voltage decreases to threshold and below and increasing as the gate voltage increases well above threshold.
Starting Page	469
Ending Page	473
File Size	378987
Page Count	5
File Format	PDF
DOI	10.1109/IEDM.1975.188925
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1975-12-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Predictive models Electron traps Fluctuations Frequency Threshold voltage Aircraft propulsion Cities and towns Solid modeling Geometry
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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