NDLI: A compatible MOS-bipolar device technology for low-power integrated circuits

Content Provider	IEEE Xplore Digital Library
Author	Price, J.E.
Copyright Year	1966
Description	Author affiliation: Fairchild Semiconductor, Palo Alto, Calif. (Price, J.E.)
Abstract	A major problem in the design of low-power integrated circuits occurs in the need for high-value resistors occupying a small area. Another problem area exists in the need for active devices capable of operation at extremely low current levels. This paper consists largely of an attack upon these problems. The relative merits of various resistor structures, including the MOS resistor, are discussed, and their electrical characteristics are compared. Active device design for low-power circuit operation is also discussed, and the design of a bipolar transistor structure is described which optimizes the current gain at low current levels. Next, a process technology is described which allows MOS resistors, double-diffused planar epitaxial NPN transistors, and diffused junction isolations to be realized within the same integrated cricuit structure.
Starting Page	64
Ending Page	66
File Size	193988
Page Count	3
File Format	PDF
DOI	10.1109/IEDM.1966.187688
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1966-10-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit technology MOSFETs Resistors Conductivity Silicon Substrates Insulation Epitaxial layers Life testing Design optimization
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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