NDLI: Micropower devices for integrated circuits

Content Provider	IEEE Xplore Digital Library
Author	Stehlin, R. Bohannon, R.
Copyright Year	1966
Description	Author affiliation: Texas Instruments Inc., Dallas, Texas (Stehlin, R.)
Abstract	This paper describes the development of devices necessary for the design of micropower integrated circuits. These devices were used specifically for complementary micropower (250 micro-watts) NAND and NOR gates and a flip-flop (300 microwatts). NPN and PNP transistors, multiemitter gating transistors, high sheet resistors and high Q capacitors are discussed. Complementary PNP and NPN structures are described as output devices and a multi-emitter device is described for input purposes. By utilizing a separate resistor diffusion, a high temperature coefficient resulted and was used to advantage for compensation of changes in VBEand hFEwith temperature. The high resistivity (500 Ω/□) of the resistor diffusion enabled the actual bar size to be held to a minimum. High Q capacitors were developed using diffused junction techniques that allowed the resistance of the charging path to be decreased. Two methods were incorporated in minimizing inverse alpha of the multi-emitter gating transistor to decrease power drain.
Starting Page	92
Ending Page	94
File Size	125623
Page Count	3
File Format	PDF
DOI	10.1109/IEDM.1966.187720
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1966-10-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Boron Electrons Resistors MOSFETs Monolithic integrated circuits Instruments Capacitors Temperature Gain control Lithography
Content Type	Text
Resource Type	Article

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