NDLI: A micron bit-size charge-storage device

Content Provider	IEEE Xplore Digital Library
Author	MacDonald, N.C. Everhart, T.E.
Copyright Year	1966
Description	Author affiliation: University of California, Berkeley, Calif. (MacDonald, N.C.)
Abstract	The use of a scanning electron microscope to produce selective, stable, and reversible charge storage in the oxide layer of an MOS transistor is discussed. Electron beam switching of MOST structures from a conducting state to a nonconducting state is described. Electron bombardment of small areas of the gate electrode, typically 5 micrometers × 5 micrometers, allows storage of many bits of information on a single three-terminal MOST. The information can be read out in a nondestructive manner. By extension of the memory operation, it is possible to perform computer logic functions with a single MOST and a small diameter electron beam. Time constants associated with electron-beam charge storage are of the order of 30ms., while discharge time constants are typically 5ms. The relationship of the charge storage phenomena to the gate voltage during electron bombardment, the electron beam voltage and current, and the geometry of the MOST are discussed. A simple roodel for the charging phenomena is presented. The use of electron beam bombardment of MOST's after fabrication to adjust the threshold voltage of different devices on a single wafer is described.
Starting Page	60
Ending Page	60
File Size	110816
Page Count	1
File Format	PDF
DOI	10.1109/IEDM.1966.187684
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1966-10-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron beams Sensor systems Voltage Thin film sensors Photoconducting materials Semiconductor diodes Image sensors Scanning electron microscopy MOSFETs Electrodes
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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