NDLI: Determination of complex permittivity for low- and high-loss materials at microwave frequencies

Content Provider	IEEE Xplore Digital Library
Author	Varadan, S.K. Zhang, L. Pan, G. Alford, T.
Copyright Year	2014
Description	Author affiliation: Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA (Varadan, S.K.; Zhang, L.; Pan, G.; Alford, T.)
Abstract	We present the determination of the complex permittivity for low loss PCB material FR4 and high loss arsenic-doped silicon wafer in the GHz frequency range, based on closed-form analytical expressions employing the Bessel's functions. For convenience and economical reasons, the FR4 sample is cut from the commercial PCB as a sandwich disk of copper-dielectric-copper, while the bare silicon disk is contained in a prefabricated conducing cavity, referred to as the radial line cavity. Experimental measurements in support with the numerical analysis are also presented. Good agreement between computational results and laboratory measured data is observed.
Starting Page	219
Ending Page	222
File Size	368768
Page Count	4
File Format	PDF
ISBN	9781479936410
e-ISBN	9781479936434
DOI	10.1109/EPEPS.2014.7103638
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Cavity resonators Permittivity Dielectrics Permittivity measurement Frequency measurement Impedance measurement Bessel's functions complex permittivity dielectric constant microwave frequency printed circuit board (PCB) silicon wafer
Content Type	Text
Resource Type	Article

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