NDLI: Impact of thermal cycling and background gas environment on tin whiskering

Content Provider	IEEE Xplore Digital Library
Author	Snipes, E. K. Flowers, G. T. Lall, P. Bozack, M. J.
Copyright Year	2014
Description	Author affiliation: Center for Advanced Vehicle and Extreme Environment Electronics (CAVE3) Auburn University, Auburn, AL 36849 (Snipes, E. K.; Flowers, G. T.; Lall, P.; Bozack, M. J.)
Abstract	(Part A) Work by Hoffman (Savannah River National Laboratory) reported Sn whiskers which grew longer in nitrogen (sealed jar) environments compared to air environments. This is of concern in electronics systems which operate in nitrogen-backfilled environments, such as hybrid circuits and sensor systems. In this work we compare Sn whiskers grown in two different environments-pure N2 and ultrahigh vacuum (UHV). After 140 days of incubation in N2, the compressive films had the highest whisker density (8,320 $cm^{−2}),$ of those in the sample set. X-ray photoelectron spectroscopy (XPS) analysis of the sputtered Sn surface after the incubation period indicate a more complex surface structure on the samples exposed to the N2 compared to UHV, suggesting that the details of the Sn oxide influences the whisker growth. (Part B) Under thermal cycling, Sn whiskers on electrodeposited films have been observed to display submicron striations that form perpendicular to the whisker's growth axis, hypothesized to originate from periodic film stress variations during cycling. In this work we have investigated whether striations occur in whiskers grown from sputter deposited films. The samples were exposed to two different thermal profiles cycling between −40°C and 125°C in a conventional cycling furnace. Very few whiskers were grown with any observable striations.
Starting Page	1
Ending Page	7
File Size	3120746
Page Count	7
File Format	PDF
e-ISBN	9781479960682
DOI	10.1109/HOLM.2014.7031020
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-10-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin Films Nitrogen Stress Silicon Argon Substrates thermal cycle Sn environment whiskers nitrogen
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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