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Content Provider | IEEE Xplore Digital Library |
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Author | Olmos, A. Miyashita, T. Nihei, M. Charry, E. Watanabe, Y. |
Copyright Year | 1998 |
Description | Author affiliation: Escola Politecnica, Sao Paulo Univ., Brazil (Olmos, A.) |
Abstract | The design of the key components for a high sampling rate /spl Sigma//spl Delta/ modulator implemented on a 0.4 /spl mu/m InGaP-InGaAs HEMT technology is described. The circuit, a 2nd-order continuous-time /spl Sigma//spl Delta/ modulator, has a fully differential architecture including pairs of highly linear V-I converters, high-speed opamps, high-speed 1-bit DAC units, and a new polarity alternating feedback (PAF) comparator. Working at a sampling rate of 4.9 GHz and a signal bandwidth of 100 MHz, the fabricated modulator exhibits 43 dB signal-to-noise ratio (SNR), equivalent to 7.2 bits resolution. The circuit occupies an active area of 0.9 mm/sup 2/, and dissipates 400 mW from a 3.2 V power supply. Such performance corresponds to the highest sampling rate and lowest power consumption for an oversampled A/D converter in III-V technology known to us. |
Starting Page | 138 |
Ending Page | 141 |
File Size | 560194 |
Page Count | 4 |
File Format | |
ISBN | 0780344340 |
DOI | 10.1109/ICCDCS.1998.705821 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1998-03-04 |
Publisher Place | Venezuela |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Sampling methods HEMTs Signal resolution Circuit noise Bandwidth Signal to noise ratio Power supplies Analog-digital conversion Digital modulation Power semiconductor switches |
Content Type | Text |
Resource Type | Article |
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