NDLI: Voltage-temperature characteristics of W/n-GaAs Schottky diodes activated by the constant forward current: application as temperature sensors

Content Provider	IEEE Xplore Digital Library
Author	Marcano, N. Singh, A. Perez, F.
Copyright Year	1998
Description	Author affiliation: Dept. de Fisica, Oriente Univ., Sucre, Venezuela (Marcano, N.)
Abstract	The W/n-GaAs Schottky diodes A and B were fabricated by rf sputter deposition of W at rf powers of 400 and 300 Watt, respectively. The Schottky diode B was subjected to a 90 min. anneal at 390/spl deg/C in Ar ambient. The forward voltage-temperature (V/sub F/-T) measurements were carried out in the temperature range 140-363 K at constant activation currents (I/sub F/) in the range 2.5-500 /spl mu/A. The V/sub F/-T characteristics were linear for I/sub F/ /spl ges/50 /spl mu/A in the diode A and for I/sub F//spl ges/2.5 /spl mu/A in the diode B. From the V/sub F/-T characteristics at 100 /spl mu/A, the values of -2.31 mVK/sup -1/ and 2.59 mVK/sup -1/ for the temperature coefficient of the forward bias voltage (dV/sub F//dT) for the diodes A and B, respectively, were determined. The value of dV/sub F//dT for the diode B was quite close to the theoretical value of -2.70 mVK/sup -1/. For constant currents in the range 2.5 /spl mu/A
Starting Page	88
Ending Page	91
File Size	273456
Page Count	4
File Format	PDF
ISBN	0780344340
DOI	10.1109/ICCDCS.1998.705812
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-03-04
Publisher Place	Venezuela
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage Schottky diodes Schottky barriers Semiconductor diodes Gallium arsenide Temperature sensors Annealing Argon Sputtering Thermal resistance
Content Type	Text
Resource Type	Article

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