NDLI: Gated lateral bipolar transistors: characteristics, modeling and applications

Content Provider	IEEE Xplore Digital Library
Author	Deen, M.J.
Copyright Year	1998
Description	Author affiliation: Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada (Deen, M.J.)
Abstract	The technology, physics, electrical characteristics (particularly at low temperatures) and analog circuit applications of a new gated lateral pnp (LPNP) bipolar transistor, fabricated with a 0.8 /spl mu/m BiCMOS technology, are described. This gated LPNP transistor has five terminals-collector, base, emitter, gate and substrate. Because there are two inputs (gate and emitter for a common-base configuration, or gate and base for a common-emitter configuration) and one output (collector), the transistor shows unique dc characteristics of variable current gain /spl beta//sub F/ of 10/sup 2//spl sim/10/sup 6/ with V/sub G/ variations of 0.4 to -0.4 V; variable transconductance g/sub M/ which increases 3/spl sim/10 times as V/sub E/ increases from 0.4 to 0.7 V. The low temperature characteristics of this GLPNP in both gate-emitter shorted and gate-base shorted configurations are investigated in detail in the range between 300 K and 77 K. This new device is very suitable for analog circuit applications; for example, when used as a mixer at 300 K, it has conversion gain of 5 to 12 dB for input RF signals up to 400 MHz.
Starting Page	22
Ending Page	32
File Size	968649
Page Count	11
File Format	PDF
ISBN	0780344340
DOI	10.1109/ICCDCS.1998.705702
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-03-04
Publisher Place	Venezuela
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors MOSFETs Temperature Analog circuits BiCMOS integrated circuits Frequency Electrodes Electric variables Gain Wireless communication
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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