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Content Provider | IEEE Xplore Digital Library |
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Author | May, S.J. Wessels, B.W. |
Copyright Year | 2004 |
Description | Author affiliation: Dept. of Mater. Sci. & Eng., Northwestern Univ., Evanston, IL, USA (May, S.J.; Wessels, B.W.) |
Abstract | In this work, (InMn)As/InAs p-n heterojunctions have been fabricated and their electronic and magnetic properties characterized. The (In,Mn)As films, deposited by atmospheric pressure meta organic vapor phase epitaxy, are ferromagnetic at room temperature as determined by magneto-optical Kerr effect (MOKE) measurements and variable-temperature magnetic force microscopy. The J-V characteristics of these junctions were measured over the temperature range of 78 to 300 K. In addition, the magnetic field dependence of the I-V characteristics has been measured. The magnetoresistive properties of these heterojunctions suggest they may be suitable for use in spintronic devices. |
Starting Page | 121 |
Ending Page | 122 |
File Size | 115043 |
Page Count | 2 |
File Format | |
ISBN | 0780382846 |
ISSN | 15483770 |
DOI | 10.1109/DRC.2004.1367813 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2004-06-21 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Magnetic properties Heterojunctions Magnetoelectronics Magnetic field measurement Atmospheric measurements Temperature measurement Magnetic films Epitaxial growth Magnetooptic effects Magnetooptic devices |
Content Type | Text |
Resource Type | Article |
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