Electronic and magnetic properties of ferromagnetic p-(In,Mn)As/n-InAs heterojunctions [spintronic device applications]

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Vertical transport through n-InAs/p-GaSb heterojunctions at high pressures and magnetic fields

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InMnAs/InAs Heterojunctions for High-Field Magnetic Sensors

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Large magnetoresistance in (In, Zn)As/InAs p-n junction

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Transistors With High-Performance Germanium (Ge) p+/n and n+/p Heterojunctions Formed on Si Substrate

Organic donor-acceptor assemblies form coaxial p-n heterojunctions with high photoconductivity

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Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${rm p}^{+}/{rm n}$ and ${rm n}^{+}/{rm p}$ Heterojunctions Formed on Si Substrate

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p-n heterojunctions composed of two-dimensional molecular crystals for high-performance ambipolar organic field-effect transistors

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Complementary n- and p-type TFETs on the same InAs/AlSb platform

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