NDLI: Ultra-Shallow Junction Formation by Plasma Doping and Flash Lamp Annealing

Content Provider	IEEE Xplore Digital Library
Author	Tsutsui, K. Sasaki, Y. Jin, C.-G. Sauddin, H. Majima, K. Fukagawa, Y. Aiba, I. Ito, H. Mizuno, B. Kakushima, K. Ahmet, P. Iwai, H.
Copyright Year	2006
Description	Author affiliation: Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol. (Tsutsui, K.)
Abstract	Ultra-shallow $P^{+}/N$ junctions were formed by boron doping using plasma doping method combined with activation annealing using spike-RTA, flash lamp annealing or laser annealing. The junctions formed with flash lamp annealing or laser annealing were promising and superior to those formed by conventional low energy ion implantation method from the viewpoints of shallowness, abruptness and low sheet resistance. The pre-amorphization by He plasma treatment (He-PA process) played an important role for the successful formation or these junctions. Electrical properties were analyzed by not only sheet resistance but also Hall measurements and junction leakage measurement
Starting Page	39
Ending Page	46
File Size	3085787
Page Count	8
File Format	PDF
ISBN	142440648X
DOI	10.1109/RTP.2006.367980
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-10
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Lamps Annealing Plasma immersion ion implantation Plasma measurements Electric resistance Electrical resistance measurement Electric variables measurement Boron Ion implantation
Content Type	Text
Resource Type	Article

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