NDLI: Influence of the Atmosphere on Ultra - Thin Oxynitride Film for Precisely Controled Plasma Nitridation Process

Content Provider	IEEE Xplore Digital Library
Author	Saki, K. Tamaoki, M. Shimizu, T. Ito, S. Mori, S. Shimazaki, A. Mizushima, I. Yamamoto, A.
Copyright Year	2006
Description	Author affiliation: Process & Manuf. Eng. Center, Toshiba Corp., Yokohama (Saki, K.)
Abstract	Influence of the atmosphere on ultra-thin oxynitride film was investigated for the precisely controlled plasma nitridation process. Some organic contaminant adsorb on the wafer before plasma nitridation process in clean room atmosphere. The adsorbed organic contaminant reduces the efficiency of plasma nitridation and increases the electrical thickness. The TDDB characteristic of ultra-thin oxynitride film was degraded due to the adsorbed organic contaminant. On the other hand, nitrogen concentration decreases due to exposure to an atmosphere after plasma nitridation process. The drop of nitrogen concentration causes $V_{th}$ shift and $V_{th}$ variation in MOSFET. The atmosphere and waiting time for post nitridation anneal affect on the drop of nitrogen concentration. It was demonstrated that the suppression of organic contamination before plasma nitridation and the control of the waiting time and atmosphere before post nitridation are the most important factors for the precise control of ultra-thin oxynitride film
Starting Page	15
Ending Page	19
File Size	1248351
Page Count	5
File Format	PDF
ISBN	142440648X
DOI	10.1109/RTP.2006.367977
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-10
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atmosphere Process control Plasma temperature Nitrogen Plasma properties Annealing Contamination Dielectric films Semiconductor films Plasma materials processing
Content Type	Text
Resource Type	Article

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