NDLI: Defectivity Performance of Full Field Immersion Photolithography Tool

Content Provider	IEEE Xplore Digital Library
Author	Nakano, K. Nagaoka, S. Owa, S. Malik, I. Yamamoto, T.
Copyright Year	2006
Description	Author affiliation: Nikon Corp, Sailama (Nakano, K.; Nagaoka, S.; Owa, S.)
Abstract	In this paper, we report results of comprehensive studies of defects originating in immersion photolithography clusters comprising immersion volume production tool (S609B, NA=1.07) and engineering evaluation tool (EET NA = 0.85). Defectivity S609B was very low, 0.013 $cm^{2}$ it attained dry exposure level successfully. Defectivity results using EET were also very promising in all three major resist processes including solvent soluble topcoat, developer soluble topcoat and topcoat-less resist. Defectivity did not show any scan speed dependency and target size dependency, showing the extendibility of our immersion technology in future mass production phase. In particular, we found that for 50 ml water droplets, weeding angle larger than about 70 degree provides immersion process free of immersion-specific defects. We successfully demonstrated very effective defect analysis technique named DSA (defect source analysis) to show what defects are immersion-specific. We also revealed the defect generation mechanism of each defect types. Deep understanding of defectivity behavior leads to a conclusion that immersion lithography is viable for IC manufacture at 45 nm node
Starting Page	30
Ending Page	38
File Size	4048918
Page Count	9
File Format	PDF
ISBN	1424402549
ISSN	10788743
DOI	10.1109/ASMC.2006.1638720
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-05-22
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Lithography Resists Production Inspection Sensor arrays Calibration Open wireless architecture Frequency selective surfaces Solvents Manufacturing
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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