NDLI: Growth and properties of n- and p-type ZnO

Content Provider	IEEE Xplore Digital Library
Author	Litton, C.W. Look, D.C. Claflin, B.B. Reynolds, D.C. Cantwell, G. Eason, D.B. Worley, R.D.
Copyright Year	2004
Description	Author affiliation: Mater. & Manufacturing Directorate, Air Force Res. Laboratory, Wright-Patterson AFB, OH, USA (Litton, C.W.)
Abstract	We will focus our attention on growth and properties of low-resistivity, n-type ZnO single crystals (/spl mu//sub e/ /spl sim/ 230 cm/sup 2//V-s, n/sub e/ /spl sim/ 1 /spl times/ 10/sup 17//cm/sup 3/, at RT), including study and identification of their characteristic shallow residual donors that are thought to control the high electrical conductivity observed in as-grown, n-type ZnO crystals. We will also direct some of our attention to study of the electrical and optical properties of recently demonstrated, nitrogen-doped, homoepitaxial p-type ZnO films grown by molecular beam epitaxy (MBE), either on low-resistivity (/spl rho/) substrates, or on Li-diffused, semi-insulating ZnO substrates. Hall mobilities, carrier concentrations and resistivities of the p-type ZnO films ranged from /spl mu//sub p/ = 1-2 cm/sup 2//V-s, n/sub p/ = 9 /spl times/ 10/sup 16//cm/sup 3/ to 1-5 /spl times/ 10/sup 18//cm/sup 3/, and /spl rho/ /spl sim/ 10-40 ohm-cm, respectively. SIMS profiles have shown that the p-type films, with thickness typically in the range of 1-2 /spl mu/m, contained large concentrations of N-atoms (as high as 1 /spl times/ 10/sup 19//cm/sup 3/ in the films) against a background of N in the substrates /spl sim/ 1 /spl times/ 10/sup 17//cm/sup 3/, and temperature-dependent Hall measurements of activation energies have shown that the binding energy (BE) of N-acceptors in ZnO is -146 meV, comparable to the BE of shallow Mg acceptors in GaN (/spl sim/ 165 meV); conductivity measurements have shown that at least one of our p-type films is prone to instability and type conversion at cryogenic temperatures and under illumination with room light. MBE growth conditions necessary to achieve p-type ZnO:N films/ZnO are discussed together with the characteristic bandedge photoluminescence (PL) signatures of the p-type layers.
Starting Page	28
Ending Page	35
File Size	476439
Page Count	8
File Format	PDF
ISBN	0780386140
DOI	10.1109/ISCSPC.2003.1354427
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide Optical films Molecular beam epitaxial growth Substrates Conductive films Crystals Conductivity measurement Hall effect Energy measurement Thickness measurement
Content Type	Text
Resource Type	Article

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