NDLI: Laser direct write doping of wide-bandgap semiconductor materials

Content Provider	IEEE Xplore Digital Library
Author	Salama, I.A. Quick, N.R. Kar, A.
Copyright Year	2004
Description	Author affiliation: Center for Res. & Educ. in Opt. & Lasers, Central Florida Univ., Orlando, FL, USA (Salama, I.A.)
Abstract	Gas immersion laser doping (GILD) and molten precursor (predeposition and drive-in diffusion) laser doping are demonstrated in SiC. Trimethylaluminum (TMAI) and nitrogen are the precursors used to produce p-type and n-type SiC, respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500-600 nm) and shallow (50 nm) junctions, respectively. Laser-assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a 150 nm p-type doped junction is fabricated in semi-insulating 6H-SiC and n-doped 4H-SiC wafers. This technique is used to p-type dope Mg in single crystal GaN to concentrations up to 10/sup 21/ cm/sup -3/ and 5/spl mu/m penetration., respectively, are achieved using various laser doping techniques. Laser direct write (LDW) conversion provides metallization to process Ohmic and rectifying contacts in these doped semiconductors, without the addition of metal, in order to conduct junction and device testing.
Starting Page	1
Ending Page	7
File Size	353101
Page Count	7
File Format	PDF
ISBN	0780386140
DOI	10.1109/ISCSPC.2003.1354423
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor lasers Semiconductor device doping Semiconductor materials Gas lasers Silicon carbide Nitrogen Substrates Gallium nitride Metallization Semiconductor device testing
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Laser direct write for wide-band gap semiconductor device fabrication: doping

Wide bandgap semiconductor RF power devices

Advanced materials and structures for high power wide bandgap devices

State-of-the-art wide band-gap semiconductors for power electronic devices

Laser doping of silicon carbide substrates

Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

Nitride semiconductor laser diodes

Modeling of Wide Bandgap Power Semiconductor Devices—Part I

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Laser direct write doping of wide-bandgap semiconductor materials

Similar Documents

Laser direct write for wide-band gap semiconductor device fabrication: doping

Wide bandgap semiconductor RF power devices

Advanced materials and structures for high power wide bandgap devices

State-of-the-art wide band-gap semiconductors for power electronic devices

Laser doping of silicon carbide substrates

Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

Nitride semiconductor laser diodes

Modeling of Wide Bandgap Power Semiconductor Devices—Part I

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Laser direct write doping of wide-bandgap semiconductor materials