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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pulvirenti, F. La Scala, A. Pennisi, S. |
| Copyright Year | 2012 |
| Description | Author affiliation: DIEEI (Dipartimento di Ingegneria Elettrica, Elettronica e Informatica), University of Catania, Italy (Pennisi, S.) || STMicroelectronics, Catania, Italy (Pulvirenti, F.; La Scala, A.) |
| Abstract | We describe an active circuit that can be used as a low-voltage bypass element and that can profitably replace the Schottky diodes in photovoltaic (PV) panels. The proposed solution is made up of a power MOS device with its embedded driving circuitry. The whole circuit does not require a dedicated DC power and is fully compatible with standard CMOS technologies. A prototype is fabricated and experimentally characterized. Compared to conventional Schottky diodes the power dissipation is reduced by more than 70%. Due to its simplicity, the solution can be integrated even directly on the panel. |
| Starting Page | 2283 |
| Ending Page | 2286 |
| File Size | 678367 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467302180 |
| ISSN | 02714302 |
| e-ISBN | 9781467302197 |
| DOI | 10.1109/ISCAS.2012.6271749 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-05-20 |
| Publisher Place | Korea (South) |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Schottky diodes Charge pumps Threshold voltage Switches Photovoltaic systems MOSFET circuits |
| Content Type | Text |
| Resource Type | Article |
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