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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kuo-Hsing Cheng Chung-Yu Chang Chia-Hung Wei |
| Copyright Year | 2003 |
| Description | Author affiliation: Dept. of Electr. Eng., Tamkang Univ., Taiwan (Kuo-Hsing Cheng; Chung-Yu Chang; Chia-Hung Wei) |
| Abstract | A new charge pump circuit is proposed in this paper. The major factors that will limit the charge pump gain and efficiency are threshold voltage drop and body effect. In this paper, the proposed positive charge pump circuit uses the charge transfer switches and floating well structure to eliminate the threshold voltage drop and the body effect problems. Due to the new circuit scheme, the new charge pump circuit can be used in a conventional n-well CMOS process for low supply voltage (2 V to 0.9 V) and have high charge pump gain and efficiency. The proposed circuit is based on the 0.25 /spl mu/m CMOS technology, and the clock frequency is 50 MHz. |
| Sponsorship | IEEE Circuits & Syst. Soc Mahanakorn Univ. Technol |
| File Size | 234274 |
| File Format | |
| ISBN | 0780377613 |
| DOI | 10.1109/ISCAS.2003.1206194 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-05-25 |
| Publisher Place | Thailand |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Charge pumps Threshold voltage CMOS technology Charge transfer Switching circuits Switches CMOS process Low voltage Clocks Frequency |
| Content Type | Text |
| Resource Type | Article |
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