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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ramirez-Angulo, J. Carvajal, R.G. Tombs, J. Torralba, A. |
| Copyright Year | 1999 |
| Description | Author affiliation: Dept. de Ing. Electron., Seville Univ., Spain (Ramirez-Angulo, J.) |
| Abstract | Two schemes for low-voltage CMOS op-amp operation with large input signal swing and constant gm are presented. One of the schemes is based on the use of capacitive dividers with multiple-input floating-gate transistors and the second on a novel concept denoted dynamic battery biasing that uses a battery to keep the op-amp input terminals close to one of the supply rails. Simulations are presented that verify the schemes operating with a 1.2 V single supply, 1 V input output swing and 38 MHz op-amp gain-bandwidth product, 130 /spl mu/W power dissipation with a 10 pF load while using 300/spl times/300 /spl mu/m/sup 2/ silicon area. These results are obtained for 0.85 V transistor's threshold voltages. Experimental results are shown that verify the correct functionality of both approaches. |
| Starting Page | 408 |
| Ending Page | 411 |
| File Size | 399326 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780354710 |
| DOI | 10.1109/ISCAS.1999.780746 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1999-05-30 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low voltage Operational amplifiers Threshold voltage Rails Batteries Silicon Bandwidth Capacitors Power dissipation |
| Content Type | Text |
| Resource Type | Article |
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