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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Minch, B.A. Hasler, P. |
| Copyright Year | 1999 |
| Description | Author affiliation: Cornell Univ., Ithaca, NY, USA (Minch, B.A.) |
| Abstract | We discuss the possibility of developing high-quality floating-gate memories and circuits in digital CMOS technologies that have only one layer of polysilicon. Here, the primary concern is whether or not we can get adequate control-gate linearity from MOS capacitors. We employ two experimental procedures to address this issue and find acceptable floating-gate circuit behaviour with MOS capacitors. First, we simultaneously characterize an MOS capacitor and a linear capacitor; the experimental data show that MOS capacitors behave similarly to linear capacitors over a finite, but usable range. Second, we characterize two typical floating-gate MOS circuit primitives, a floating-gate amplifier and a multiple-input translinear element, two basic circuits that rely heavily on the linearity of the capacitors that couple into the floating gates. Our measurements show that floating-gate circuits with MOS-capacitor control gates behave like their counterparts built with linear capacitors over specific regions of operation. |
| Starting Page | 400 |
| Ending Page | 403 |
| File Size | 435083 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780354710 |
| DOI | 10.1109/ISCAS.1999.780744 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1999-05-30 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS technology CMOS process MOS capacitors Nonvolatile memory Voltage Capacitance measurement Semiconductor device measurement Linearity Integrated circuit measurements Capacitance-voltage characteristics |
| Content Type | Text |
| Resource Type | Article |
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