NDLI: Impact of the non-ideal temperature dependence of IC-VBE on ultra-wide temperature range SiGe HBT bandgap reference circuits

Content Provider	IEEE Xplore Digital Library
Author	Lan Luo Guofu Niu Najafizadeh, L. Cressler, J.D.
Copyright Year	2010
Description	Author affiliation: ECE Department, 200 Broun Hall, Auburn University, AL 36849, USA (Lan Luo; Guofu Niu) \|\| School of ECE, 777 Atlantic, Drive, N.W., Georgia Tech, Atlanta, 30332-0250, USA (Najafizadeh, L.; Cressler, J.D.)
Abstract	We investigate the impact of the non-ideal temperature dependence of IC-VBE on the performance of ultra-wide temperature range SiGe HBT bandgap reference circuits. Both the slope and intercept of IC-VBE show temperature dependences that significantly differ from “ideal” Shockley theory widely used in BGR analysis and design, and are shown to have significant impact on ΔVBE(T ), IC (T ) and VBE(T ).
Starting Page	220
Ending Page	223
File Size	309850
Page Count	4
File Format	PDF
ISBN	9781424485789
ISSN	10889299
e-ISBN	9781424485796
DOI	10.1109/BIPOL.2010.5668007
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit modeling Temperature measurement Noise measurement Silicon germanium Temperature dependence Temperature distribution Saturation current SiGe HBT Bandgap reference PTAT Non-ideality factor
Content Type	Text
Resource Type	Article

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Impact of the non-ideal temperature dependence of IC-VBE on ultra-wide temperature range SiGe HBT bandgap reference circuits