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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Joohwa Kim Buckwalter, J.F. |
| Copyright Year | 2010 |
| Description | Author affiliation: University of California-San Diego, 9500 Gilman Dr., La Jolla, USA 92093 (Joohwa Kim; Buckwalter, J.F.) |
| Abstract | A fully integrated Q-band (40∼45 GHz) bidirectional transceiver is demonstrated in a 0.12-µm SiGe BiCMOS technology. The RF front-end design eliminates the need for transmit/receive switches by demonstrating a novel PA/LNA circuit. The transceiver has a transmit conversion gain of 35 dB with a 3-dB bandwidth of 4 GHz. The OP1dB is 8.5 dBm and Psat is 9.5 dBm. The transceiver has a receive conversion gain of 34 dB with a 3-dB bandwidth of 3 GHz. The noise figure is 4.7 dB and OP1dB is −5 dBm at 43 GHz. The chip consumes 119.4 mW when transmitting and 54 mW when receiving, and overall chip size is 1.6 mm×0.8 mm including pads. To the author's knowledge, this work represents the first switchless millimeter-wave bidirectional transceiver in a CMOS or BiCMOS processes. |
| Starting Page | 57 |
| Ending Page | 60 |
| File Size | 2439790 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424485789 |
| ISSN | 10889299 |
| e-ISBN | 9781424485796 |
| DOI | 10.1109/BIPOL.2010.5667959 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-10-04 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gain Transceivers Noise Radio frequency Impedance matching BiCMOS integrated circuits Loss measurement |
| Content Type | Text |
| Resource Type | Article |
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