NDLI: Low-resistance wide-voltage-range analog switch for implantable neural stimulators

Content Provider	IEEE Xplore Digital Library
Author	Yunpu Hu Songping Mai Yixin Zhao Chun Zhang
Copyright Year	2013
Description	Author affiliation: Inst. of Microelectron., Tsinghua Univ., Beijing, China (Yunpu Hu; Chun Zhang) \|\| Shenzhen Key Lab. of Inf. Sci. & Technol., Tsinghua Univ., Shenzhen, China (Songping Mai; Yixin Zhao)
Abstract	Analog switch is a basic component in neural stimulators as it plays an important role in the control process of opening or closing stimulation, switching electrode polarity or power supply. In implantable stimulator circuit, the switch is usually required to work under a wide-range changing voltage and keep a fairly low on-resistance and low charge injection. In this paper, a switch and its driving system are proposed. The driving system can provide a stable high voltage to drive the NMOS transistor switch, thus solving conflicts between high voltage output and low voltage supply. According to the result from transistor-level simulation based on 0.35um CMOS high-voltage technology, the analog switch can achieve fast speed (ton=70ns, toff=280ns), low and flat resistance (4.5Ohm on average), low charge injection (20pC), extremely low current leak(36pA), and wide working voltage range from 1.8V to 12V, which completely meets the application requirement of neural stimulators.
Sponsorship	IEEE Beijing Sect.
Starting Page	1
Ending Page	4
File Size	312165
Page Count	4
File Format	PDF
ISBN	9781467364157
ISSN	2162755X
e-ISBN	9781467364171
DOI	10.1109/ASICON.2013.6812045
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-10-28
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Charge pumps Switching circuits Simulation Capacitors Power demand Threshold voltage
Content Type	Text
Resource Type	Article

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