NDLI: Non-linear Modeling of a Multi-FET Multi-Port IC

Content Provider	IEEE Xplore Digital Library
Author	Grinbergs, O. Dunleavy, L. Gross, S. Schmitz, B. Winslow, T.
Copyright Year	2000
Description	Author affiliation: Wireless and Microwave (WAMI) Program, Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., ENB 118, Tampa, Florida (Grinbergs, O.; Gross, S.) \|\| ITT GaAsTEK, 5310 Valley Park Drive, Roanoke, Virginia 24019 (Schmitz, B.; Winslow, T.) \|\| Wireless and Microwave (WAMI) Program, Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., ENB 118, Tampa, Florida, (813) 974-2574, dunleavy@eng.usf.edu (Dunleavy, L.)
Abstract	A method is presented for developing a large-signal MESFET model for a compact multi-FET and multiport GaAs IC, which is employed in a 2 GHz hybrid power amplifier. The approach employs Agilent (formerly HP) EEsof¿s IC-CAP¿ computer-aided measurement acquisition and parameter extraction software. IC-CAP is used to develop conventional Curtice Cubic MESFET models for the constituent FETs. The interesting aspects of the work are the multi-port nature of the IC, and the inability to derive suitable device characterization measurements directly from the multi-FET IC. Our approach was to model individual ¿dropout¿ devices that are similar, though not identical to, the devices comprising the IC. The composite multi-FET non-linear model has more than six accessible ports to which, ground connections, package parasitics, biasing and matching networks are connected to enable simulation of the entire power amplifier. Individual FET model parameters are extracted from swept DC and small-signal S-parameter measurements. Linear transformations and regression algorithms within the IC-CAP software facilitate parameter extraction. Measurements and subsequent large-signal models were made of three individual MESFET devices, with gate widths of 300¿m, 1200¿m and 7200¿m, representative of those that comprise the MMIC power amplifier. Additional measurement challenges included the relatively high power output, and current of the largest FET device. Exploration of accuracy and limitations of the non-linear models was carried out with linear and non-linear measurement and model comparisons.
Starting Page	1
Ending Page	7
File Size	80338
Page Count	7
File Format	PDF
ISBN	0780356861
DOI	10.1109/ARFTG.2000.327416
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Integrated circuit modeling Power amplifiers FETs Power measurement MESFET integrated circuits Hybrid integrated circuits Parameter extraction Gallium arsenide Software measurement Integrated circuit packaging
Content Type	Text
Resource Type	Article

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