NDLI: Verification of Non-Linear MOSFET Models by Intermodulation Measurements Under Loadpull Conditions

Content Provider	IEEE Xplore Digital Library
Author	Schreurs, D. Vandamme, E. Vandenberghe, S. Carchon, G. Nauwelaers, B.
Copyright Year	2000
Description	Author affiliation: K.U. Leuven, Div. ESAT-TELEMIC, Kard. Mercierlaan 94, B-3001 Heverlee, Belgium; IMEC, Div. STDI/CMOS, Kapeldreef 75, B-3001 Heverlee, Belgium (Vandamme, E.) \|\| K.U. Leuven, Div. ESAT-TELEMIC, Kard. Mercierlaan 94, B-3001 Heverlee, Belgium, Phone: +32-16-321821, Fax: +32-16-321986, E-mail: dominique.schreurs@esat.kuleuven.ac.be (Schreurs, D.) \|\| K.U. Leuven, Div. ESAT-TELEMIC, Kard. Mercierlaan 94, B-3001 Heverlee, Belgium (Vandenberghe, S.; Carchon, G.; Nauwelaers, B.)
Abstract	The trend towards system-on-chip realisation tightens the design specifications and consequently imposes high accuracy requirements on device models. Hence, model validations by only single-tone CW excitations do no longer suffice, because the obtained accuracy can not straightforwardly be extrapolated to an expected accuracy under realistic large-signal operating conditions. We developed a measurement set-up that enables to characterise the amplitude and phase of intermodulation products at different load impedances, which can serve as an important verification tool with regard to power amplifier applications. This technique is applied to evaluate two non-linear MOSFET model representations: the compact BSIM3v3 model and the in-house developed look-up table model. We show that for both model types the phase disagreement is more pronounced than the amplitude inaccuracy. We also stress the importance of an adequate de-embedding of the bonding pads and access transmission lines.
Starting Page	1
Ending Page	5
File Size	73167
Page Count	5
File Format	PDF
ISBN	0780356861
DOI	10.1109/ARFTG.2000.327401
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits System-on-a-chip Impedance measurement Power measurement Phase measurement Power amplifiers Table lookup Stress Bonding Power transmission lines
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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