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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hui Zhang Tolbert, L.M. Jung Hee Han Chinthavali, M.S. Barlow, F. |
| Copyright Year | 2010 |
| Description | Author affiliation: Electrical Engineering Department Tuskegee University Tuskegee, Al 36088 (Hui Zhang) || Electrical Engineering and Computer Science The University of Tennessee Knoxville, TN 37996-2100 (Tolbert, L.M.) || Global Power Electronics 27 Mauchly Ste 206, Irvine, CA 92618 (Jung Hee Han) || Power Electronics and Electric Machinery Research Center, Oak Ridge National Laboratory, Knoxville, TN 37932 (Chinthavali, M.S.) || Electrical and Computer Engineering, University of Idaho, Moscow, Idaho 83844-1023 (Barlow, F.) |
| Abstract | Power electronics play an important role in electricity utilization from generation to end customers. Thus, high-efficiency power electronics help to save energy and conserve energy resources. Research on silicon carbide (SiC) power electronics has shown their better efficiency compared to Si power electronics due to the significant reduction in both conduction and switching losses. Combined with their high-temperature capability, SiC power electronics are more reliable and compact. This paper focuses on the development of such a high efficiency, high temperature inverter based on SiC JFET and diode modules. It involves the work on high temperature packaging (>200 $^{°}C),$ inverter design and prototype development, device characterization, and inverter testing. A SiC inverter prototype with a power rating of 18 kW is developed and demonstrated. When tested at moderate load levels compared to the inverter rating, an efficiency of 98.2% is achieved by the initial prototype without optimization, which is higher than most Si inverters. |
| Starting Page | 1108 |
| Ending Page | 1112 |
| File Size | 1420847 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424447824 |
| ISSN | 10482334 |
| DOI | 10.1109/APEC.2010.5433365 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-02-21 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Inverters Hermetic seals Silicon carbide Multichip modules Power electronics Prototypes Temperature Testing Power generation Energy resources Packaging Silicon Carbide (SiC) SiC JFET Efficiency High temperature Inverter |
| Content Type | Text |
| Resource Type | Article |
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