NDLI: The thermal treatment effect on electrical properties of mn-modified polycrystalline BiFeO3 thin films

Content Provider	IEEE Xplore Digital Library
Author	Sangwook Kim Won-Jeong Kim Myang Hwan Lee Jin Su Park Da Jeong Kim Myong-Ho Kim Tae Kwon Song Dalhyun Do
Copyright Year	2014
Description	Author affiliation: Dept. of Adv. Mater. Eng., Keimyung Univ., Daegu, South Korea (Dalhyun Do) \|\| Dept. of Phys., Changwon Nat. Univ., Changwon, South Korea (Sangwook Kim; Won-Jeong Kim) \|\| Adv. Mater. Eng., Changwon Nat. Univ., Changwon, South Korea (Myang Hwan Lee; Jin Su Park; Da Jeong Kim; Myong-Ho Kim; Tae Kwon Song)
Abstract	Mn modified BFO (BFMO) thin films has been deposited using pulsed laser deposition on $Pt(111)/Ti/SiO_{2}/Si(100)$ substrates at 540°C. After completion of deposition, the BFMO thin films were cooled by two different procedures; quenching and chamber cooling. Differences in structural and electrical properties of BFMO thin films were investigated by an X-ray diffractometer and an electrical system, respectively. Improvement in ferroelectricity, a large remnant polarization of ~187.39 $μC/cm^{2}$ with 600 kV/cm, was found from the quenched BFMO film. This was attributed to the observed high texturing along (111) orientation. Reduced leakage current density of the quenched BFMO films were explained by defect chemistry with a possibly lower concentration of the oxygen vacancy due to quenching procedure.
Starting Page	1
Ending Page	4
File Size	398170
Page Count	4
File Format	PDF
ISBN	9781479938605
DOI	10.1109/ISAF.2014.6922986
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-05-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage currents Bismuth Substrates Epitaxial growth Pulsed laser deposition Cooling Mn modified BFO thin film secaning Quenching process
Content Type	Text
Resource Type	Article

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