NDLI: PZT-based high coupling with low permittivity thin films

Content Provider	IEEE Xplore Digital Library
Author	Wasa, K. Matsushima, T. Adachi, H. Matsunaga, T. Suzuki, M. Yanagitani, T. Yamamoto, T. Yoshida, S. Tanaka, S. Trolier-McKinstry, S.
Copyright Year	2013
Description	Author affiliation: Nagoya Inst. of Technol., Nagoya, Japan (Suzuki, M.; Yanagitani, T.) \|\| Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan (Yoshida, S.; Tanaka, S.) \|\| Micro-Eng., Kyoto Univ., Kyoto, Japan (Wasa, K.; Matsushima, T.) \|\| Pennsylvania State Univ., University Park, PA, USA (Trolier-McKinstry, S.) \|\| Panasonic Co., Kadoma, Japan (Adachi, H.; Matsunaga, T.) \|\| Nat. Defense Acad., Yokosuka, Japan (Yamamoto, T.)
Abstract	PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and $e_{31,f}$ = -8 ~ - $12C/m^{2}.$ Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with $e_{31,f}$ = -12 $C/m^{2}.$ The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.
Sponsorship	IEEE Ultrasonics Ferroelectr. Freq. Control Soc.
Starting Page	69
Ending Page	72
File Size	1081861
Page Count	4
File Format	PDF
ISBN	9781467359962
DOI	10.1109/ISAF.2013.6748700
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-21
Publisher Place	Czech Republic
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices Silicon Epitaxial growth X-ray scattering Dielectrics Film bulk acoustic resonators Substrates thin film piezoelectric Power MEMS PZT-based thin films Pb(Mn,Nb)O3-PZT single crystal thin films
Content Type	Text
Resource Type	Article

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