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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Allahverdi, M. Safari, A. |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Ceramic & Mater. Eng., Rutgers Univ., Piscataway, NJ, USA (Allahverdi, M.; Safari, A.) |
| Abstract | Lead zirconate titanate (PZT) thick films have been prepared on alumina substrates using a direct-write technology. Thick films of 50 to 200 /spl mu/m were deposited, dried and then sintered at 1000/spl deg/ to 1200/spl deg/C for 30 minutes in PbO-rich atmosphere. Comparison of the thick film properties revealed that the dielectric constant and remnant polarization of the films sintered at 1100/spl deg/C were maximum, likely due to a balance between densification and lead loss. The effects of three sintering aids, i.e., lead oxide, lithium bismuth oxide, and a borosilicate glass, have been investigated on the microstructure and electrical properties of the PZT thick films. It was observed that a 2 wt% lithium bismuth oxide additive has a positive effect on the dielectric constant and remnant polarization of the PZT thick films sintered at 1100/spl deg/C. The microstructures of the films revealed that 3 wt% additives would result in excessive shrinkage and formation of large pores and cracks at a sintering temperature of 1100/spl deg/C and above. PZT films with 2 wt.% lithium bismuth oxide showed improved dielectric constant (/spl sim/40-50%) and remanent polarization (/spl sim/65%) compared to additive-free PZT thick films. It was also found that the properties are strongly thickness dependent. |
| Starting Page | 250 |
| Ending Page | 253 |
| File Size | 937731 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780384105 |
| ISSN | 10994734 |
| DOI | 10.1109/ISAF.2004.1418383 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-08-23 |
| Publisher Place | Canada |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thick films Dielectric constant Polarization Lithium Bismuth Microstructure Additives Titanium compounds Dielectric substrates Lead |
| Content Type | Text |
| Resource Type | Article |
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