NDLI: Low temperature AlN thin film growth for layered structure SAW and BAW devices

Content Provider	IEEE Xplore Digital Library
Author	Assouar, M.B. Elmazria, O. El Hakiki, M. Alnot, P. Tiusan, C.
Copyright Year	2005
Description	Author affiliation: LPMIA-CNRS-UMR, Henri Poincare Univ., Vandoeuvre-les-Nancy, France (Assouar, M.B.; Elmazria, O.; El Hakiki, M.; Alnot, P.)
Abstract	In this work, c-axis oriented aluminium nitride thin films on silicon substrates were deposited by reactive RF magnetron sputtering method at various substrate temperature (without heating - 400/spl deg/C) with the same thickness (1.4 /spl mu/m). The structural, morphological and optical properties of AlN films were investigated by X-ray diffraction, field emission scanning electron microscope, atomic force microscopy and Fourier transform infrared absorbance spectroscopy. It was found that the AlN films showed the same highly [002] preferred orientation with low full width of half maximum of rocking curve, which is about 2/spl deg/ for all the films elaborated in various temperatures. The optical properties of these films analysed by FTIR, exhibit absorption bands attributed to vibrational modes of Al-N bonds, in particular El(TO) at 678 cm/sup -1/ and Al(TO) at 613 cm/sup -1/. The surface roughness of films determined by AFM is less than 0.5 nm for the film grown at low temperature, which is very suitable for SAW device achievement. Elastic properties of deposited AlN films were evaluated by realisation and characterisation of AlN/silicon SAW device. Experimental results show that realised structure exhibits a good frequency response and practical values of electromechanical coupling coefficient and temperature coefficient of frequency.
Starting Page	43
Ending Page	46
File Size	1239071
Page Count	4
File Format	PDF
ISBN	0780384105
ISSN	10994734
DOI	10.1109/ISAF.2004.1418333
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-08-23
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Thin film devices Surface acoustic waves Bulk acoustic wave devices Optical films Optical microscopy Sputtering Atom optics Atomic force microscopy Silicon
Content Type	Text
Resource Type	Article

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