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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Dongkyun Park Jeon-Kook Lee Deok-Soo Cheong Jong-Wan Park |
| Copyright Year | 2000 |
| Description | Author affiliation: Thin Film Technol. Res. Center, Korea Inst. of Sci. & Technol., Seoul, South Korea (Dongkyun Park) |
| Abstract | Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ [PMN-PT] films were deposited by the radio-frequency (r.f) magnetron sputtering technique and post-annealed. The growth of PMN-PT films as a function of MgO concentration in targets, annealing temperature and heating /cooling rate during annealing was studied. The films deposited from 66 mol% MgO excess target showed good perovskite structure in this study. For film deposited from the target with 66 mol% MgO excess content and postannealed conventionally at 750/spl deg/C for 10 minutes in oxygen flow, preferential [111] orientation of the perovskite phase and pyrochlore phase of less than 3% was observed. And the room temperature dielectric constant was 2500 at 1 kHz. Dielectric and structural properties exhibited relaxor-like behavior. Excess MgO in PMN-PT was homogeneously precipitated and dispersed in grain and grain bounder. The number of MgO nano-particles increased with increasing MgO content in PMN-PT targets. |
| Starting Page | 937 |
| Ending Page | 940 |
| File Size | 371089 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780359402 |
| ISSN | 10994734 |
| DOI | 10.1109/ISAF.2000.942472 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-07-21 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Niobium Sputtering Temperature Lead Rapid thermal annealing Ceramics Heating Cooling Dielectric constant Ferroelectric materials |
| Content Type | Text |
| Resource Type | Article |
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