NDLI: First-Principles Study of Electrical Resistivity in Co<formula formulatype=inline><tex Notation=TeX>$

Content Provider	IEEE Xplore Digital Library
Author	Kota, Y. Sakuma, A.
Copyright Year	1965
Abstract	Theoretical study of the electrical resistivity is performed for Heusler compounds Co₂MnSi with atomic disorder by using the first-principles techniques based on the tight-binding linear muffin-tin orbital method and Kubo-Greenwood formula. Experimentally, it is so difficult to control the degree of the ordering of the Heusler compounds precisely that their conduction property have not been clarified enough. In this study, we found that the electrical resistivities of the disordered Co₂MnSi reach about 100 μΩ cm, which is much larger than binary alloys of 3-D transition metals. By analyzing the electronic structure, we consider that the large resistivities of the disordered Co₂ MnSi are originated from the strong electrons scattering due to the low matching of electronic structure, when there is antisite type defections that break the L2₁ crystalline symmetry.
Sponsorship	IEEE Magnetics Society
Starting Page	4405
Ending Page	4408
Page Count	4
File Size	565358
File Format	PDF
ISSN	00189464
Volume Number	47
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Manganese Compounds Scattering Magnetic moments Electric potential transition metal compounds Ferromagnetic materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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