NDLI: Ultrafast crystallization kinetics in (Pb,La)(Zr<sub>0.30</sub>Ti<sub>0.70</sub>)O<sub>3</sub> thin films by pulsed excimer laser annealing

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IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control - Front cover

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Introduction to the Special Issue on the Joint Meeting of 12th International Meeting on Ferroelectricity and 18th IEEE International Symposium on Applications of Ferroelectrics

Analysis of polarization behavior in relaxation of BaTiO₃-based ferroelectrics using wideband dielectric spectroscopy

Ferroelectric 180° a-a nanostripe and nanoneedle domains in thin BaTiO₃ films prepared with focused-ion beam

Improved photoluminescence and ferroelectric properties of (Bi_3.6Eu_0.4)Ti₃O₁₂ thin films via Li⁺ doping

Relaxor-PT single crystals: observations and developments

Magnetic field-induced strain and magnetoelectric effects in sandwich composite of ferromagnetic shape memory Ni-Mn-Ga crystal and piezoelectric PVDF polymer

Pyroelectric performances of rhombohedral 0.42Pb(In_1/2Nb_1/2)O₃-0.3Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃ single crystals

Interpretation of T_m and T^* in Relaxor Ferroelectric 0.93Pb(Zn_1/3Nb_2/3)O₃-0.07PbTiO₃

Lead-free piezoelectric ceramics and thin films

Structural, dielectric, and ferroelectric properties of the (1ߝx)PbTiO₃-xBiAlO₃ solid solution

Ultrafast crystallization kinetics in (Pb,La)(Zr_0.30Ti_0.70)O₃ thin films by pulsed excimer laser annealing

Study of the integrated growth of dielectric films on GaN semiconductor substrates

Dielectric properties of (Ba,Sr)TiO₃ thin films with varied microstructures prepared by the chemical solution deposition method for thin-film capacitors and ferroelectric varactors

High-performance PMNߝPT thick films

Micro-machined high-frequency (80 MHz) PZT thick film linear arrays

Comparison of BST film microwave tunable devices based on (100) and (111) MgO substrates

Multiferroic and magnetoelectric materialsߞnovel developments and perspectives

Defect control for polarization switching in BiFeO₃ single crystals

Novel room temperature multiferroics for random access memory elements

Intrinsic microwave dielectric loss of lanthanum aluminate

Dielectric properties of rutile structure (Zn_1/3B_2/3)_x(Ti_ySn_1ߝy)_1ߝxO₂ (B=Nb⁵⁺,Ta⁵⁺) at microwave frequencies

A control theory approach to clock steering techniques

4-D x 3-D ultrasound: real-time scan conversion, filtering, and display of displacement vectors with a motorized curvilinear transducer

Anechoic sphere phantoms for estimating 3-D resolution of very-high-frequency ultrasound scanners

Quantitative measurements of apoptotic cell properties using acoustic microscopy

Calibration of sound forces in acoustic traps

Minimum variance ultrasonic imaging applied to an in situ sparse guided wave array

Separation of overlapping linear frequency modulated (LFM) signals using the fractional fourier transform

Stator design of a new type of spherical piezoelectric motor

Cellular polypropylene polymer foam as air-coupled ultrasonic transducer materials

Usage of symmetry in the simulation of interdigital transducers

A rotary ultrasonic motor using bending vibration transducers

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Ultrafast crystallization kinetics in (Pb,La)(Zr_0.30Ti_0.70)O₃ thin films by pulsed excimer laser annealing

Content Provider	IEEE Xplore Digital Library
Author	Bharadwaja, S.S.N. Kulik, J. Akarapu, R. Beratan, H. Trolier-McKinstry, S.
Copyright Year	1986
Abstract	The crystallization kinetics of laser-annealed La-modified Pb(Zr,Ti)O₃ (PLZT) thin films on LaNiO₃-coated silicon substrates were investigated for substrate temperatures below 400°C. A KrF excimer laser having a ~20 ns pulse width and an energy density ~40 mJ/cm² was used to crystallize the films. The perovskite phase developed with cumulative laser pulse exposures; it was found that ~380 to 400 nm thick films could be fully crystallized for a total exposure time of 0.1 to 1 ms. Laser-crystallized films exhibited comparable dielectric and ferroelectric properties to those prepared by rapid thermal annealing at 650°C for 1 min. The evolution of the dielectric properties as a function of the number of laser strikes suggests that once nuclei are present, they rapidly grow through the depth of the film. This is consistent with the electron microscopy results, which did not show a well-defined planar growth front that proceeds from the top to the bottom of the film. The resulting films showed comparatively large lateral grain sizes (on the order of 250 to 300 nm), with high defect concentrations. The nucleation and growth mechanisms were modeled using Avrami kinetics under rate-dependent and nonisothermal conditions. These results indicate that PLZT crystallization via laser annealing is nucleation-limited.
File Size	757224
File Format	PDF
ISSN	08853010
Volume Number	57
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Films Crystallization Dielectrics Diffraction Annealing Laser modes
Content Type	Text
Resource Type	Article
Subject	Acoustics and Ultrasonics Instrumentation Electrical and Electronic Engineering

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