NDLI: Improved photoluminescence and ferroelectric properties of (Bi<sub>3.6</sub>Eu<sub>0.4</sub>)Ti<sub>3</sub>O<sub>12</sub> thin films via Li<sup>+</sup> doping

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IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control - Front cover

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Introduction to the Special Issue on the Joint Meeting of 12th International Meeting on Ferroelectricity and 18th IEEE International Symposium on Applications of Ferroelectrics

Analysis of polarization behavior in relaxation of BaTiO₃-based ferroelectrics using wideband dielectric spectroscopy

Ferroelectric 180° a-a nanostripe and nanoneedle domains in thin BaTiO₃ films prepared with focused-ion beam

Improved photoluminescence and ferroelectric properties of (Bi_3.6Eu_0.4)Ti₃O₁₂ thin films via Li⁺ doping

Relaxor-PT single crystals: observations and developments

Magnetic field-induced strain and magnetoelectric effects in sandwich composite of ferromagnetic shape memory Ni-Mn-Ga crystal and piezoelectric PVDF polymer

Pyroelectric performances of rhombohedral 0.42Pb(In_1/2Nb_1/2)O₃-0.3Pb(Mg_1/3Nb_2/3)O₃-0.28PbTiO₃ single crystals

Interpretation of T_m and T^* in Relaxor Ferroelectric 0.93Pb(Zn_1/3Nb_2/3)O₃-0.07PbTiO₃

Lead-free piezoelectric ceramics and thin films

Structural, dielectric, and ferroelectric properties of the (1ߝx)PbTiO₃-xBiAlO₃ solid solution

Ultrafast crystallization kinetics in (Pb,La)(Zr_0.30Ti_0.70)O₃ thin films by pulsed excimer laser annealing

Study of the integrated growth of dielectric films on GaN semiconductor substrates

Dielectric properties of (Ba,Sr)TiO₃ thin films with varied microstructures prepared by the chemical solution deposition method for thin-film capacitors and ferroelectric varactors

High-performance PMNߝPT thick films

Micro-machined high-frequency (80 MHz) PZT thick film linear arrays

Comparison of BST film microwave tunable devices based on (100) and (111) MgO substrates

Multiferroic and magnetoelectric materialsߞnovel developments and perspectives

Defect control for polarization switching in BiFeO₃ single crystals

Novel room temperature multiferroics for random access memory elements

Intrinsic microwave dielectric loss of lanthanum aluminate

Dielectric properties of rutile structure (Zn_1/3B_2/3)_x(Ti_ySn_1ߝy)_1ߝxO₂ (B=Nb⁵⁺,Ta⁵⁺) at microwave frequencies

A control theory approach to clock steering techniques

4-D x 3-D ultrasound: real-time scan conversion, filtering, and display of displacement vectors with a motorized curvilinear transducer

Anechoic sphere phantoms for estimating 3-D resolution of very-high-frequency ultrasound scanners

Quantitative measurements of apoptotic cell properties using acoustic microscopy

Calibration of sound forces in acoustic traps

Minimum variance ultrasonic imaging applied to an in situ sparse guided wave array

Separation of overlapping linear frequency modulated (LFM) signals using the fractional fourier transform

Stator design of a new type of spherical piezoelectric motor

Cellular polypropylene polymer foam as air-coupled ultrasonic transducer materials

Usage of symmetry in the simulation of interdigital transducers

A rotary ultrasonic motor using bending vibration transducers

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Improved photoluminescence and ferroelectric properties of (Bi_3.6Eu_0.4)Ti₃O₁₂ thin films via Li⁺ doping

Content Provider	IEEE Xplore Digital Library
Author	Hong Zhou Guangheng Wu Feng Gao Ni Qin Dinghua Bao
Copyright Year	1986
Abstract	(Bi_3.6Eu_0.4)Ti₃O₁₂ (BEuT) thin films with different Li⁺ doping contents were prepared on fused silica and Pt/Ti/SiO₂/Si substrates by chemical solution deposition, and the effects of Li⁺ doping contents on the photoluminescence and ferroelectric properties of the thin films were investigated in detail. The results showed that an appropriate amount of Li⁺ doping could effectively improve emission intensities for two characteristic Eu³⁺ emission transitions of ⁵D₀→⁷F₁ (594 nm) and ⁵D₀→⁷F₂ (617 nm) compared with BEuT thin films without Li doping. This photoluminescence improvement can be attributed to the dual roles of Li⁺ ions, one of which is that Li ions can act as co-activators which are helpful to the energy transfer from the host to the Eu³⁺ ions, leading to a higher quantum yield; the other is that Li ion doping can induce local distortion of crystal field surrounding the Eu³⁺ activator because Bi³⁺ and Li⁺ ions have different ionic radii. In addition, the Li⁺-doped BEuT thin films had larger remanent polarization than BEuT thin films without Li doping prepared under the same experimental conditions. These results suggest that Li⁺ doping is an effective way to improve photoluminescence and ferroelectric properties of the (Bi,Eu)₄Ti₃O₁₂ thin films.
File Size	410508
File Format	PDF
ISSN	08853010
Volume Number	57
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Ions Substrates Photoluminescence Silicon compounds Art Films
Content Type	Text
Resource Type	Article
Subject	Acoustics and Ultrasonics Instrumentation Electrical and Electronic Engineering

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