NDLI: Ferromagnetic Thin Film Noise Suppressor <newline/>Integrated to On-Chip Transmission Lines

Content Provider	IEEE Xplore Digital Library
Author	Yamaguchi, M. Muroga, S. Endo, Y. Suzuki, M. Inagaki, T. Mitsuzuka, Y.
Copyright Year	1965
Abstract	This paper studies the effects of integrating soft magnetic films to a 0.15 ¿m rule Silicon-On-Insulator (SOI)-CMOS on-chip microstrip line and coplanar line. In microstrip lines, the intensity of ferromagnetic resonance loss increases with increase in the distance between the magnetic film and ground plane because the magnetic fields from the signal and ground lines are mutually opposite; also, the counter field from the ground current becomes weaker according to distance of the ground plane from the magnetic film. For that reason, it is good to locate the signal line close to the magnetic film and the ground line far away. Furthermore, greater loss occurs with a coplanar line than with microstrip line because both the signal and ground line currents contribute to loss generation.
Sponsorship	IEEE Magnetics Society
Starting Page	2450
Ending Page	2453
Page Count	4
File Size	471017
File Format	PDF
ISSN	00189464
Volume Number	46
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Transmission lines Magnetic films Microstrip Magnetic noise Coplanar transmission lines Silicon on insulator technology Magnetic resonance Magnetic fields Counting circuits thin films Electromagnetic compatibility (EMC) electromagnetic noise suppressor ferromagnetic resonance (FMR) loss Joule loss on-chip transmission line
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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