NDLI: Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si

Content Provider	IEEE Xplore Digital Library
Author	Zetian Mi Bhattacharya, P.
Copyright Year	1995
Abstract	We have investigated the design, molecular beam epitaxial growth, and fundamental characteristics of pseudomorphic and metamorphic quantum dot laser heterostructures on GaAs and Si. By utilizing the special techniques of low-temperature growth and in situ thermal annealing and carefully controlling various growth parameters, we have achieved 1.3-1.55-mum pseudomorphic and metamorphic quantum dot heterostructures on GaAs that exhibit superior optical quality. The special techniques of p-doping and tunnel injection have also been explored in the design and growth of quantum dot laser heterostructures, leading to long-wavelength lasers on GaAs that exhibit, for the first time, ultralow threshold current (J_th = 63 A/cm²), nearly temperature-invariant operation (T₀ ap infin), large modulation bandwidth (f_-3 _dB = 11 GHz), near-zero alpha-parameter, and very small chirp (les0.2 A). With the incorporation of multiple layers of InAs quantum dots as effective three-dimensional dislocation filters, we have demonstrated the first room-temperature operational quantum dot lasers on Si that exhibit relatively low threshold current (J_th = 900 A/cm²) and very high temperature stability (T₀ = 244 K).
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1171
Ending Page	1179
Page Count	9
File Size	478480
File Format	PDF
ISSN	1077260X
Volume Number	14
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dot lasers Gallium arsenide Laser stability Optical design Threshold current Molecular beam epitaxial growth Annealing Optical control Optical design techniques Optical filters tunnel injection Metamorphic heterostructure molecular beam epitaxy (MBE) monolithic integration optical communication p-doping quantum dot semiconductor laser Si photonics thermal annealing
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels

TEM evaluation of defects in GaAs/InAs 3D-layer/GaAs heterostructures grown by molecular beam epitaxy

Silicon-based long-wavelength III–V quantum-dot lasers

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

III–V quantum-dot laser growth on silicon and germanium

Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures

Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE

Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si

Similar Documents

Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs

Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels

TEM evaluation of defects in GaAs/InAs 3D-layer/GaAs heterostructures grown by molecular beam epitaxy

Silicon-based long-wavelength III–V quantum-dot lasers

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

III–V quantum-dot laser growth on silicon and germanium

Enhanced terahertz emission from GaAs in MBE-grown InAs/GaAs quantum dot structures

Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE

Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si