NDLI: Dry Etching of Anisotropic Microstructures for Distributed Bragg Reflectors in AlGaInP/GaAs Laser Structures

Content Provider	IEEE Xplore Digital Library
Author	Edwards, G.T. Smowton, P.M. Westwood, D.I.
Copyright Year	1995
Abstract	A process for anisotropically etching AlGalnP/GaAs laser structures in a high-temperature (180degC), single-step BCl₃/Cl₂/Ar plasma process is demonstrated. The etch rate is shown to be stable over the duration of the etch due to its in- sensitivity to temperature. However, this etch process is unsuitable for etching high-aspect-ratio features due to the strong aspect ratio dependence of the GaAs etch rate at 180degC. A two-step etch where the GaAs is etched at 25degC and the AlGalnP layers are etched at 180degC is demonstrated that etches both materials anisotropically. The relative amount of Ar in the plasma has a strong effect on both the sidewall quality and the aspect-ratio-dependent etch rate. Finally, a process to etch anisotropic microstructures with a weak etch rate dependence on aspect ratio is reported.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1098
Ending Page	1103
Page Count	6
File Size	621124
File Format	PDF
ISSN	1077260X
Volume Number	14
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dry etching Anisotropic magnetoresistance Microstructure Distributed Bragg reflectors Gallium arsenide Argon Plasma applications Plasma temperature Plasma stability Temperature sensors plasma AlGaInP distributed Bragg reflectors etching lasers
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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