NDLI: MOCVD-Grown Dilute Nitride Type II Quantum Wells

Content Provider	IEEE Xplore Digital Library
Author	Mawst, L.J. Huang, J.Y.-T. Xu, D.P. Jeng-Ya Yeh Tsvid, G. Kuech, T.F. Tansu, N.
Copyright Year	1995
Abstract	Dilute nitride Ga(In)NAs/GaAsSb ldquoWrdquo type II quantum wells on GaAs substrates have been grown by metal-organic chemical vapor deposition (MOCVD). Design studies underscore the importance of nitrogen incorporation to extend the emission wavelength into the 1.5 mum region as well as increase the electron confinement, given the material strain relaxation limitations. These studies also indicate that the Sb content of the GaAs_1-xSb_x hole well is required to be greater than x ~ 0.2, to provide adequate hole confinement (i.e., DeltaE_nu > 150 meV). Photoluminescence (PL) and electroluminescence (EL) studies are used to characterize the optical transitions and compare with a ten-band \bm k.p simulation. We find that the lowest energy type II transition observed is in good agreement with theory. Preliminary results are presented on diode lasers with two- and three-stage ldquoWrdquo-active regions that exhibit emission that is blue-shifted from the PL, due to charge separation and carrier band-filling of higher energy transitions. Further structure optimization, including multiple-stage (eight to ten W-stages) active regions is required to lower the threshold carrier density and minimize carrier band-filling and built-in electric field effects resulting from charge separation. Dilute nitride materials, such as GaAs_1- y-z Sby Nz /InP, are also under development offering potential for wavelength extension into the mid-IR employing InP substrates.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	979
Ending Page	991
Page Count	13
File Size	1102071
File Format	PDF
ISSN	1077260X
Volume Number	14
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Indium phosphide Chemical vapor deposition MOCVD Nitrogen Electron emission Capacitive sensors Photoluminescence Electroluminescence Diode lasers type II GaAs GaAsSb GaInNAs mid-IR semiconductor lasers ten-band ${\bm k.p}$ Hamiltonian
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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GaAsSbN/GaAsSb/InP type-II Quantum Wells for Mid-IR Emission

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1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer

N-rich and dilute-nitride GaNx(AsSb)1-x on InP substrates

EL emission from TlInGaAs/GaAs quantum well LEDs and LDs

MOCVD-Grown Dilute Nitride Type II Quantum Wells (2007)

Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers

MOCVD-Grown Dilute Nitride Type II Quantum Wells

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