NDLI: Tungsten Added Sb<formula formulatype=inline><tex>$_{80}$</tex></formula>Te<formula formulatype=inline><tex>$_{20}$</tex></formula> for Phase-Change RAM

Content Provider	IEEE Xplore Digital Library
Author	Kin-Fu Kao Huai-Yu Cheng Chao-An Jong Lan, C.-J. Tsung-Shune Chin
Copyright Year	1965
Abstract	Sb₈₀Te₂₀ has the merit of high crystallization speed yet with low crystallization temperature (T_x~132degC), and hence, not suitable for use as a medium of phase change random access memory (PCRAM). We proposed to add refractory metals to solve this problem. It was found that W-added Sb₈₀Te₂₀ show increased T_x up to 233degC with increasing W. More important, the melting temperature of W-Sb-Te materials, 536-539degC irrespective of W content, is more than 80degC lower than that of Ge₂Sb₂Te₅. They show a two to four orders of magnitude lowering in resistance during phase change from an amorphous to a crystalline state. With these promising properties, the composition Sb₈₀Te₁₇W ₃ is recommended as a potential candidate for PCRAM
Sponsorship	IEEE Magnetics Society
Starting Page	930
Ending Page	932
Page Count	3
File Size	330608
File Format	PDF
ISSN	00189464
Volume Number	43
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tungsten Phase change random access memory Tellurium Crystallization Crystalline materials Temperature Electric resistance Amorphous materials Nonvolatile memory Conductivity tungsten doped Sb-Te Crystallization temperature electrical resistivity phase-change memory reset current
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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