NDLI: Current-in-Plane Giant Magnetoresistance Sensor Using a Thin Cu Spacer and Dual Nano-Oxide Layers With a <formula formulatype=inline> <tex>${rm DR}$</tex></formula> Greater Than <formula formulatype=inline> <tex>$20$</tex></formula> Ohms/sq.

Content Provider	IEEE Xplore Digital Library
Author	Seigler, M.A.
Copyright Year	1965
Abstract	The magnetoresistance (MR) of the current-in-plane spin-valve, which is currently utilized as the readback sensor in the majority of hard disk drives, has reached a maximum MR of DR/R_min.~20% and DR_sheet~4 Omega/sq. A new sensor film stack will be introduced here that utilizes a trilayer (CoFe\Cu\CoFe) where the Cu interlayer is very thin (~10 Aring) to enhance the MR and where the Cu thickness is chosen such that the ferromagnetic Neel coupling and the antiferromagnetic Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling between the CoFe layers partially cancel one another, to maximize the sensitivity. By changing the Cu interlayer thickness, the overall interlayer coupling was adjusted from about -0.05 erg/cm² to -0.4 erg/cm² while keeping the MR large. Nano-oxide layers (NOLs) are also incorporated below and above the trilayer sensor to enhance the MR. An example of this sensor is NiFeCr 20 Aring/CoFeO 10 Aring/CoFe 15 Aring/Cu 10.5 Aring/CoFe 15 Aring/AlO 30 Aring and will be referred to as CIP-3L. With the combination of the thin Cu spacer, the NOLs and minimal additional layers to shunt the current around the trilayer sensor (no antiferromagnetic material and no pinned layers), as deposited sheet films with an MR of DR/R >25% and DR/sq. >20 Omega/sq. were achieved. This paper shows the optimization of the sensor stack, such as film thicknesses, NOL material, and oxidation process, the adjustability of the interlayer exchange coupling between the CoFe layers and also shows the repeatability of the sensor deposition
Sponsorship	IEEE Magnetics Society
Starting Page	651
Ending Page	656
Page Count	6
File Size	522854
File Format	PDF
ISSN	00189464
Volume Number	43
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Giant magnetoresistance Magnetic sensors Antiferromagnetic materials Thin film sensors Thick film sensors Magnetic heads Hard disks Sheet materials Magnetic recording Magnetic multilayers magnetic recording Current-in-plane (CIP) giant magnetoresistance (GMR) magnetoresistance (MR)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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